Microelectronic component assemblies with recessed wire bonds and methods of making same

ABSTRACT

The present disclosure suggests various microelectronic component assembly designs and methods for manufacturing microelectronic component assemblies. In one particular implementation, a microelectronic component assembly includes a microelectronic component, a substrate, and at least one bond wire. The substrate has a reduced-thickness base adjacent terminals of the microelectronic component and a body having a contact surface spaced farther from the microelectronic component than a bond pad surface of the base. The bond wire couples the microelectronic component to a bond pad carried by the bond pad surface and has a maximum height outwardly from the microelectronic component that is no greater than the height of the contact surface from the microelectronic component.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims foreign priority benefits of SingaporeApplication No. 200404238-8 filed Jul. 23, 2004, in the name of MicronTechnology, Inc., and entitled “MICROELECTRONIC COMPONENT ASSEMBLIESWITH RECESSED WIRED BONDS AND METHODS OF MAKING SAME,” the entirety ofwhich is incorporated herein by reference.

TECHNICAL FIELD

The present invention relates to microelectronic components. Inparticular, aspects of the invention relate to microelectronic componentassemblies and methods of manufacturing microelectronic componentassemblies. Certain embodiments of the invention provide packagedmicroelectronic component assemblies.

BACKGROUND

Semiconductor chips or dies typically are manufactured from asemiconductor material such as silicon, germanium, or gallium/arsenide.An integrated circuit or other active feature(s) is incorporated in thedie adjacent one surface, often referred to as the “active surface,” ofthe die. The active surface typically also includes input and outputterminals to facilitate electrical connection of the die with anothermicroelectronic component.

Since semiconductor dies can be degraded by exposure to moisture andother chemical attack, most dies are encapsulated in a package thatprotects the dies from the surrounding environment. The packagestypically include leads or other connection points that allow theencapsulated die to be electrically coupled to another electroniccomponent, e.g., a printed circuit board. One common package design,referred to as a board-on-chip (BOC) package, includes a semiconductordie attached to a small circuit board, e.g., via a die attach adhesive.Some or all of the terminals of the semiconductor die then may beelectrically be connected to a first set of contacts of the board, e.g.,by wire bonding. The connected board and die may then be encapsulated ina mold compound to complete the packaged microelectronic componentassembly. A second set of contacts carried on an outer surface of theboard remain exposed; these exposed contacts are electrically connectedto the first contacts, allowing the features of the semiconductor die tobe electrically accessed.

FIG. 1 schematically illustrates a conventional packaged microelectroniccomponent assembly 10. This microelectronic component assembly 10includes a semiconductor die 20 having an front surface 22, which bearsan array of terminals 24, and a back surface 26. This microelectroniccomponent assembly 10 is a conventional BOC package in which a back side32 of a circuit board 30 is attached to the front surface 22 of the die20 by adhesive members 35 a and 35 b. A passage 34 is formed through theentire thickness of the board 30 and permits access to the terminals 24of the die 20 by a wire bonding machine or the like. The first adhesivemember 35 a extends adjacent one side of the passage 34 and the secondadhesive member 35 b extends along the opposite side of the passage 34.

The microelectronic component assembly 10 also includes a plurality ofbond wires 40. A first set of bond wires 40 a may extend from individualterminals 24 of the die 20 to a first set of bond pads 32 a arranged onthe front side 36 of the board 30 along a first side of the passage 34.Similarly, a series of second bond wires 40 b may extend from otherterminals 24 in the terminal array to a second set of bond pads 32 barranged on the front side 36 along the opposite side of the passage 34.Typically, these bond wires 40 are attached using wire-bonding machinesthat spool a length of wire through a capillary. A molten ball may beformed at a protruding end of the wire and the capillary may push thismolten ball against one of the terminals 24, thereby attaching theterminal end 42 of the wire 40 to the die 20. The capillary moveslaterally in a direction away from the bond pad 32 to which the wire 40will be attached (referred to as the reverse motion of the capillary),then a further length of the wire will be spooled out and the board end44 of the wire 40 will be attached to the bond pad 32. The reversemotion of the capillary is required to bend the wire into the desiredshape to avoid undue stress at either the terminal end 42 or the boardend 44. The need to move the capillary in the reverse direction to formthe bend in the wire 40 requires significant clearance between theterminal end 42 and the inner surface of the passage 34, increasing thewidth W of the passage 34. The reverse motion also increases the lengthof each of the bond wires 40 and often requires an increased loop heightL of the wire 40 outwardly from the front surface 22 of the die 20.

As noted above, most commercial microelectronic component assemblies arepackaged in a mold compound 50. The mold compound 50 typicallyencapsulates the die 20, the adhesive members 35, the bond wires 40, andan inner portion of the board 30. A remainder of the board 30 extendslaterally outwardly from the sides of the mold compound 50. In manyconventional applications, the mold compound 50 is delivered usingtransfer molding processes in which a molten dielectric compound isdelivered under pressure to a mold cavity having the desired shape. Inconventional side gate molds, the mold compound will flow from one sideof the cavity to the opposite side. As the front of the moltendielectric compound flows along the passage 34 under pressure, it willtend to deform the wires. This deformation, commonly referred to as“wire sweep,” can cause adjacent wires 40 to abut one another, creatingan electrical short. Wire sweep may also cause one of the wires 40 tobridge two adjacent leads, creating an electrical short between the twoleads. These problems become more pronounced as the wire pitch becomessmaller and as thinner wires 40 are used.

To protect the bond wires, a conventional BOC package is positioned inthe mold cavity with the die oriented downwardly and the substrateoriented upwardly, i.e., generally in the orientation illustrated inFIG. 1. The mold compound 50 commonly flows longitudinally along thelength of the passage 34 (in a direction perpendicular to the plane ofthe cross sectional view of FIG. 1) to create the lower portion of themold compound 50, then flows in the opposite direction along the backside 32 of the board 30 to create the upper portion of the moldcompound. In an attempt to keep the exposed portion of the substrate'sfront side 36 exposed, the back side 32 of the board 30 is typicallysupported by pins that extend upwardly from the bottom of the mold. Thepressure of the mold compound 50 flowing along the passage 34, however,can force mold compound between the front face 36 if the board 30 andthe surface of the mold cavity, leaving a flash coating of the moldcompound on the front face 36. This flash coating must be removed beforeuse if the contacts 37 on the front face 36 are used to electricallycouple the microelectronic component assembly 10 to another component.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view of a conventional packagedmicroelectronic component assembly.

FIG. 2 is a schematic cross-sectional view of a microelectroniccomponent subassembly in accordance with one embodiment of theinvention.

FIG. 3 is a schematic cross-sectional view of the microelectroniccomponent subassembly of FIG. 2 after the addition of bonding wires.

FIG. 4 is a schematic cross-sectional view of a packaged microelectroniccomponent assembly in accordance with one embodiment of the inventionthat incorporates the microelectronic component subassembly of FIG. 3.

FIG. 5 is a schematic cross-sectional view of a stage in the manufactureof the packaged microelectronic component subassembly of FIG. 4.

DETAILED DESCRIPTION

A. Overview

Various embodiments of the present invention provide variousmicroelectronic component assemblies and methods for formingmicroelectronic component assemblies. The terms “microelectroniccomponent” and “microelectronic component assembly” may encompass avariety of articles of manufacture, including, e.g., SIMM, DRAM,flash-memory, ASICs, processors, flip chips, ball grid array (BGA)chips, or any of a variety of other types of microelectronic devices orcomponents therefor.

For ease of understanding, the following discussion is subdivided intotwo areas of emphasis. The first section discusses microelectroniccomponent assemblies in accordance with selected embodiments of theinvention. The second section outlines methods in accordance with otherembodiments of the invention.

B. Microelectronic Component Assemblies Having Recessed Wire Bonds

FIGS. 2 and 3 schematically illustrate microelectronic componentsubassemblies in accordance with selected embodiments of the invention.These microelectronic components are referred to herein as subassembliesprimarily because they are unlikely to be sold commercially in thisfashion and instead represent an intermediate stage in the manufactureof a commercial device, e.g., the packaged microelectronic componentassembly 100 of FIG. 4.

Turning first to FIG. 2, the microelectronic component subassembly 101shown therein includes a microelectronic component 110 and a substrate120. The microelectronic component 110 has an active surface 112 and aback surface 116. The active surface 112 carries an array of terminals114. In one embodiment (not shown), the terminals 114 are aligned alonga longitudinal midline of the microelectronic component 110. In theillustrated embodiment, the terminals 114 are arranged in alongitudinally extending array in which the terminals 114 are staggeredalong either side the midline of the microelectronic component. As isknown in the art, such a staggered arrangement can facilitate a smallerwire pitch, increasing the maximum number of terminals 114 in a givenlength. Arrays in which the terminals 114 are more widely distributed onthe active surface 112 may be used instead.

The microelectronic component 110 may comprise a single microelectroniccomponent or a subassembly of separate microelectronic components. Inthe embodiment shown in FIG. 2, the microelectronic component 110 istypified as a single semiconductor die. In one particularimplementation, the microelectronic component 110 comprises a memoryelement, e.g., SIMM, DRAM, or flash memory. In other implementations,the microelectronic component 110 may comprise an ASIC or a processor,for example.

The substrate 120 may include a back surface 130 and a contact surface128 that carries a plurality of contacts 129. The distance between theback surface and the contact surface defines a thickness of a body 126of the substrate 120. A recess 132 in the substrate extends inwardlyfrom the contact surface 128 to a bond pad surface 124 (shown as 124 aand 124 b in FIG. 2) that is intermediate the back surface 130 and thecontact surface 128, leaving a reduced-thickness base 122 (shown as 122a and 122 b in FIG. 2) between the bond pad surface 124 and the backsurface 130. A passage 134 extends through the base and may comprise anelongate slot that extends along the length of the array of terminals114. The recess 132 extends laterally outwardly from the passage 134 inat least one area to define the bond pad surface 124.

In the illustrated embodiment, the passage 134 may have a width W thatis less than a width of the recess 132 and have a midline that generallybisects the width of the recess 132. This will define a first bond padsurface 124 a extending along one edge of the passage 134 and a secondbond pad surface 124 b extending along the other edge of the passage134. As explained below, aspects of the microelectronic componentassembly 101 allow the width W of the recess 134 to be substantiallysmaller than the gap width W encountered in conventional designs such asthe one shown in FIG. 1.

Any of a variety of common microelectronic component substrate materialsmay be used to form the substrate 120. For example, the substrate mayhave a laminate structure such as those used in some printed circuitboards. In one embodiment, the substrate 120 may be formed of a firstply or set of plies that define the thickness of the base 122 and asecond ply or set of plies that have a thickness equal to the height ofthe recess H_(R). If so desired, a printed circuit may be definedbetween the first and second plies to electrically connect the bond pads125 to the contacts 129.

The substrate 120 may be attached to the microelectronic component 110by means of an adhesive member. In the microelectronic componentsubassembly 101 of FIG. 2, the back surface 130 the substrate 120 is beattached to the active surface 112 of the microelectronic component 110by a pair of spaced-apart adhesive members 135 a and 135 b. One adhesivemember 135 a may extend along one side of the passage 134 and the otheradhesive member 135 b may extend along the opposite side of the passage134. In one embodiment, each of the adhesive members 135 comprises alength of a conventional die attach tape, e.g., a polyimide film such asKAPTON. In another embodiment, each adhesive member 135 comprises aquantity of a thermoplastic resin or a curable epoxy.

The contact surface 128 of the substrate 120 is spaced a first height H₁from the active surface 112 of the microelectronic component 110. Thebond pad surfaces 124 a and 124 b each may be positioned at a secondheight H₂ from the active surface 112. The first height H₁ is greaterthan the second height H₂, defining a recess height H_(R) between thebond pad surfaces 124 and the contact surface 128 of the substrate 120.The relative dimensions of these heights H₁, H₂, and H_(R) may be variedto meet the needs of a particular application.

In the embodiment shown in FIG. 2, the recess 132 defines a sharp changein thickness where the substrate body 126 adjoins the base 122. This isnot necessary; the recess 132 may have a sloped, angled, or curvedperiphery to define a more gradual transition between the bond padsurface 124 and the contact surface 128.

FIG. 3 schematically illustrates a microelectronic component subassembly102 that incorporates the microelectronic component subassembly 101 ofFIG. 2. In particular, the device shown in FIG. 3 comprises themicroelectronic component subassembly 101 of FIG. 2 with two or morebond wires attached thereto. In the cross-sectional view of FIG. 3, onlytwo bond wires, a first bond wire 140 a and a second bond wire 140 b,are visible. The first bond wire 140 a has a terminal end 142 bonded toone of the terminals 114 of the microelectronic component 110 and a bondpad end 144 attached to a bond pad (125 a in FIG. 2) on the first bondpad surface 124 a. The second bond wire 140 b also has a terminal end142 attached to one of the terminals 114 of the microelectroniccomponent 110 and has a bond pad end 144 that is attached to a bond pad(125 b in FIG. 2) on the opposite bond pad surface 124 b. A terminallength 143 of each of the bond wires 140 may be positioned in thepassage 134 and extend outwardly from the active surface 112 of themicroelectronic component 110.

In the subassembly 102 of FIG. 3, each of the bond wires 140 has amaximum height L outwardly from the active surface 112 that is nogreater than the height (H₁ in FIG. 2) of the contact surface 128 of thesubstrate 120. As a consequence, none of the bond wires 140 will extendoutwardly beyond the plane of the contact surface 128. In FIG. 3, themaximum height L of the bond wires 140 is less than the height H₁,leaving the bond wires 140 spaced a distance D below the contact surface128. In one particular embodiment, the recess height H_(R) is at leastabout two times the diameter of the bonding wires 140. It is believedthat a recess height H_(R) of about 2-2.5 times the thickness of thebonding wire 140 will provide more than adequate manufacturingtolerances to ensure that the bond wires 140 do not extend outwardlybeyond the contact surface 128.

The microelectronic component subassembly 102 illustrated in FIG. 3 maybe incorporated in a wide variety of microelectronic componentassemblies. FIG. 4 illustrates one particular microelectronic componentassembly 100 that is manufactured from the microelectronic componentsubassembly 102 of FIG. 3. The microelectronic component assembly 100also includes a dielectric matrix 150 that covers the bond wires 140,the microelectronic component 110, and a portion of the substrate 120,leaving the contacts 129 of the contact surface 128 exposed for accessinstead of covered by the dielectric matrix 150. In the illustratedembodiment, the dielectric matrix 150 includes a first portion 154 and asecond portion 158. The first portion 154 substantially fills the recess132 and the passage (134 in FIG. 2). The second portion 158 defines aback surface 160 of the assembly 100. The first and second portions 154and 158 may be formed during the same manufacturing step, e.g., in asingle transfer molding operation. In another embodiment, the firstportion 152 and the second portion 158 are formed in separatemanufacturing steps.

In one embodiment, the first portion 154 of the dielectric matrix 150may have a maximum height outwardly from the active surface 112 of themicroelectronic component that is no greater than the height (H₁ in FIG.2) of the contact surface 128 of the substrate 120. In the particularimplementation illustrated in FIG. 4, the dielectric matrix 150 has anouter surface 156 that is substantially coplanar with the contactsurface 128. This presents the microelectronic component assembly 100with a relatively flat outer surface that comprises the outer surface156 of the dielectric matrix 150 and the contact surface 128 of thesubstrate 120. In an alternative embodiment, the dielectric outersurface 156 is recessed below the contact surface 128, but stillsubstantially encapsulates the bond wires 140.

The dielectric matrix 150 may be formed of any material that willprovide suitable protection for the elements within the matrix 150. Itis anticipated that most conventional, commercially availablemicroelectronic packaging mold compounds may be useful as the dielectricmatrix 150. Such mold compounds typically comprise a dielectricthermosetting plastic that can be heated to flow under pressure into amold cavity of a transfer mold. In other embodiments, the dielectricmatrix 150 may comprise a more flowable dielectric resin that can beapplied by wicking under capillary action instead of delivered underpressure in a transfer mold.

As noted previously, terminal pitch and bond wire pitch in packagedmicroelectronic components (e.g., microelectronic component 10 ofFIG. 1) are decreasing over time. The requisite smaller wire diametersand closer spacing exacerbates the previously noted problems associatedwith wire sweep. The microelectronic component assembly 100 of FIG. 4can reduce some of these problems. Having the bond pads 125 (FIG. 2) ofthe substrate 120 positioned closer to the active surface 112 of themicroelectronic component 110 reduces the spacing necessary for thereverse motion of the capillary of a wire bonding machine. This, inturn, permits the surfaces of the inner periphery of the passage (134 inFIGS. 2 and 3) to be positioned closer to one another, reducing thewidth (W in FIG. 2) of the opening through the substrate 120.

Because the bond wires 140 need not extend outwardly from the activesurface 112 as far or extend laterally as far to reach the bond pads 125of the substrate 120, the length of each of the bonding wires 140 can bematerially reduced. Wire sweep increases as the bonding wires becomelonger. Shortening the bond wires 140, therefore, will reduce the wiresweep encountered for bond wires 140 having the same diameter, or it maypermit the use of thinner (and cheaper) bond wires 140 that experienceabout the same degree of wire sweep.

The microelectronic component assembly 100 of FIG. 4 also includes anarray of conductive structures 220 (only two of which are visible inthis view). Each of the conductive structures 220 is carried on and isin electrical contact with one of the contacts 129 of the substrate 120.In FIG. 4, these conductive structures are typified as solder balls.Other suitable conductive structures may include conductive epoxy bumpsor pillars, conductor-filled epoxy, or an anisotropic “Z-axis”conductive elastomer. These conductive structures 220 may be used toelectrically connect the contacts 129 of the substrate 120 to anothermicroelectronic component, e.g., a substrate such as a printed circuitboard, using conventional flip chip or BGA techniques.

C. Methods of Manufacturing Microelectronic Component Assemblies

As noted above, other embodiments of the invention provide methods ofmanufacturing microelectronic component assemblies. In the followingdiscussion, reference is made to the particular microelectroniccomponent assemblies shown in FIGS. 2-4. It should be understood,though, that reference to these particular microelectronic componentassemblies is solely for purposes of illustration and that the methodoutlined below is not limited to any particular microelectroniccomponent assembly shown in the drawings or discussed in detail above.

In one embodiment, a method of the invention may include juxtaposing anactive surface 112 of a microelectronic component 110 with the backsurface 130 of a substrate 120. This may include aligning the passage134 in the base 122 with the terminals 114 of the microelectroniccomponent 110. Once the substrate 120 is in the desired position withrespect to the microelectronic component 110, the substrate 120 may beattached to the active surface 112 of the microelectronic component 110with the array of terminals 114 accessible through the passage 134. Inone embodiment, this attachment is accomplished via a pair of adhesivemembers 135. If the adhesive members 135 each comprise a die attachtape, the first adhesive member 135 a may be attached to the activesurface 112 along a first longitudinal side of the array of terminals114 and the second die attach tape 135 b may be attached to the activesurface 112 along the opposite side of the array of terminals. Thesubstrate 120 may then be brought into contact with the outer surfacesof the adhesive members 135, thereby attaching the substrate 120 to themicroelectronic component 110.

In one embodiment, at least two bond wires 140 are used to electricallycouple the microelectronic component 110 to the substrate 120. Using aconventional, commercially available wire bonding machine, a terminalend 142 of a first bond wire 140 a may be attached to one of theterminals 114 of the microelectronic component 110 and the bond pad end144 of the first bond wire 140 a may be bonded to a bond pad 125 a onthe bond pad surface 124 of the substrate 120. In a similar fashion, asecond bond wire 140 b may be attached to a second terminal 114 of themicroelectronic component 110 and to another bond pad 125 b. In oneembodiment, each of the bond wires 140 has a maximum height outwardlyfrom the active surface 112 of the microelectronic component 110 that isless than the height H₁ of the contact surface 128.

A dielectric matrix 150 may be used to protect the microelectroniccomponent subassembly 102. For example, the microelectronic componentassembly 100 shown in FIG. 4 may be formed by positioning themicroelectronic component subassembly 102 in a transfer mold with themicroelectronic component 110 and the bond wires 140 positioned in amold cavity. A molten dielectric resin may then be delivered underpressure to fill the mold cavity, yielding a dielectric matrix 150 suchas that shown in FIG. 4.

FIG. 5 schematically illustrates a stage in a transfer molding operationin accordance with one embodiment of the invention. In thisillustration, the microelectronic component subassembly 102 of FIG. 3 ispositioned in a mold cavity 255 of a mold 250. The mold may comprise anupper mold element 260 having an inner surface that defines an uppermold cavity surface 262 and a lower mold element 270 having an innersurface that defines a lower mold cavity surface 272.

The back surface 130 of the substrate 120 may be spaced from the uppermold cavity surface 262, defining a first void 265 of the mold cavity255. The contact surface 128 of the microelectronic componentsubassembly 102 may be oriented downwardly and disposed in contact withthe lower mold cavity surface 272. This defines a second void 275 of themold cavity 255 between the bond pad surface 124 and the lower moldcavity surface 272. The second void 275 is further bounded by the recess(132 in FIG. 2) and the passage (134 in FIG. 2) of the substrate 120 andthe active surface (112 in FIG. 2) of the microelectronic component 110.

The first and second voids 265 and 275 may be substantially filled witha dielectric matrix (150 in FIG. 4) by delivering a molten mold compoundto the mold cavity under pressure. In one particular implementation, themold compound is delivered to the first void 265 before it is deliveredto the second void. For example, the mold compound may be deliveredadjacent an end of the first void 265, flow along the length of thefirst void 265 (perpendicular to the plane of the cross section of FIG.5), then flow in the opposite direction to fill the second void 275. Theweight of the microelectronic component subassembly 102 will help keepthe contact surface 128 flush with the lower mold cavity surface 272.Delivering the mold compound to the first void 265 before delivering itto the second void 275 will further urge the contact surface 128 againstthe lower mold cavity surface 272, significantly limiting the likelihoodthat the mold compound will squeeze between the contact surface 128 andthe lower mold cavity surface 272 to foul the contacts 129. In anotherembodiment, both voids 265 and 275 may be filled simultaneously. Thepressure of the mold compound in the first void 265 will still helplimit intrusion of the mold compound onto the contacts 129.

If necessary, any inadvertent flash coating of the dielectric matrix 150on the contact surface 128 of the substrate 120 may be removed byetching or grinding. As noted above, though, this is less likely tooccur than in conventional, substrate-up molding operations. Theconductive structures 220 (FIG. 5) may be applied to some or all of thecontacts 129 of the substrate 120 to define an array of conductivestructures 220. The conductive structures 220 may be deposited using asolder mask/etch process, screen printing, or any of a number of otherconventional techniques used in depositing solder balls, conductiveepoxies, and other conductive structures.

The above-detailed descriptions of embodiments of the invention are notintended to be exhaustive or to limit the invention to the precise formdisclosed above. While specific embodiments of, and examples for, theinvention are described above for illustrative purposes, variousequivalent modifications are possible within the scope of the invention,as those skilled in the relevant art will recognize. For example,whereas steps are presented in a given order, alternative embodimentsmay perform steps in a different order. The various embodimentsdescribed herein can be combined to provide further embodiments. Ingeneral, the terms used in the following claims should not be construedto limit the invention to the specific embodiments disclosed in thespecification, unless the above-detailed description explicitly definessuch terms.

1. A method of manufacturing a microelectronic component assembly,comprising: juxtaposing a back surface of a substrate with an activesurface of a microelectronic component, wherein the substrate has abody, a reduced-thickness base portion, and a passage through the base,the body having a first thickness and the base portion having a secondthickness that is less than the first thickness, and the active surfaceof the microelectronic component carries an array of terminals that isaccessible through the passage; attaching the back surface of thesubstrate to the active surface of the microelectronic component withthe body of the substrate having a contact surface that is spaced a bodyheight outwardly from the active surface of the microelectroniccomponent; attaching a first bond wire to a first terminal of the arrayand to a first bond pad carried by the base portion of the substrate,the first bond wire having a maximum height outwardly from the activesurface that is less than the body height; attaching a second bond wireto a second terminal of the array and to a second bond pad carried bythe base portion of the substrate, the second bond wire having a maximumheight outwardly from the active surface that is less than the bodyheight; positioning the substrate in a mold cavity with the contactsurface against a lower mold surface of the mold cavity, leaving a firstvoid between the back surface and the upper mold surface and a secondvoid between the active surface and the bottom mold surface; andencapsulating the first and second bonding wires in a dielectric matrixby substantially filling the first and second voids of the mold cavitywith the dielectric matrix while the contact surface is urged againstthe lower mold surface.
 2. The method of claim 1 further comprisingcovering at least a portion of each of the first and second bond wireswith a dielectric matrix.
 3. The method of claim 1 further comprisingcovering at least a portion of each of the first and second bond wireswith a dielectric matrix that has a maximum height outwardly from theactive surface of the microelectronic component that is no greater thanthe body height.
 4. The method of claim 1 further comprising covering atleast a portion of each of the first and second bond wires with adielectric matrix that has a maximum height outwardly from the activesurface of the microelectronic component that is less than the bodyheight.
 5. The method of claim 1 further comprising substantiallyfilling the recess with a dielectric matrix that has a maximum heightoutwardly from the active surface of the microelectronic component thatis no greater than the body height.
 6. The method of claim 1 furthercomprising depositing a conductive structure on a contact surface of thebody of the substrate.
 7. A method of manufacturing a microelectroniccomponent assembly, comprising: attaching a back surface of a substrateto an active surface of a microelectronic component, wherein thesubstrate has at least one contact carried on a contact surface that isspaced from the back surface, at least one bond pad carried by a bondpad surface that is intermediate the back surface and the contactsurface, and a passage that extends between the bond pad surface and theback surface; connecting the bond pad to a component terminal carried bythe active surface of the microelectronic component with a bond wirethat extends through the passage; positioning the substrate in a moldcavity with the contact surface disposed against a lower mold surface ofthe mold cavity and with the back surface spaced from an upper moldsurface of the mold cavity, leaving a first void between the backsurface and the upper mold surface and a second void between the bondpad surface and the bottom mold surface; substantially filling the firstand second voids of the mold cavity with a dielectric matrix such that afirst portion of the dielectric matrix in the first void urges thesubstrate contact surface against the bottom mold surface as a secondportion of the dielectric fills the second void.
 8. The method of claim7 wherein the bond wire is formed to extend outwardly from the activesurface of the microelectronic component to a height that is no greaterthan a height of the contact surface from the active surface.
 9. Themethod of claim 7 wherein substantially filling the second void leaves amaximum dielectric matrix height outwardly from the active surface ofthe microelectronic component that is no greater than a height of thecontact surface from the active surface.
 10. The method of claim 7wherein the substrate includes a recess extending inwardly from thecontact surface to the bond pad surface and the second void includes therecess.
 11. The method of claim 7 wherein substantially filling thesecond void substantially encapsulates the bonding wire within thedielectric matrix.
 12. The method of claim 7 wherein the bond pad is afirst bond pad, the component terminal is a first component terminal,and the bond wire is a first bond wire, and wherein the bond pad surfacecarries a second bond pad and the microelectronic component carries asecond component terminal, the method further comprising connecting thesecond bond pad to the second component terminal with a second bondwire.
 13. The method of claim 12 wherein substantially filling thesecond void substantially encapsulates the bonding wire within thedielectric matrix.
 14. The method of claim 12 wherein substantiallyfilling the first and second voids of the mold cavity with thedielectric matrix includes delivering the first portion of thedielectric matrix to the first void before delivering the second portionof the dielectric matrix to the second void.
 15. The method of claim 14wherein substantially filling the first and second voids of the moldcavity with the dielectric matrix includes: delivering the first portionof the dielectric matrix to the first void adjacent an end of the firstvoid; flowing the first portion of the dielectric matrix along a lengthof the first void in a first direction; thereafter, delivering thesecond portion of the dielectric matrix to an end of the second void;flowing the second portion of the dielectric matrix along a length ofthe second void in a second direction generally opposite of the firstdirection.
 16. The method of claim 12 wherein substantially filling thefirst and second voids of the mold cavity with the dielectric matrixincludes simultaneously delivering the first and second portions of thedielectric matrix to the first and second voids.
 17. A method ofmanufacturing a microelectronic component assembly, comprising:attaching a back surface of a substrate to an active surface of amicroelectronic component, the active surface carrying a componentterminal, wherein the substrate has at least one contact carried on acontact surface opposite the back surface, at least one bond pad carriedby a bond pad surface that is intermediate the back surface and thecontact surface, and a passage that extends between the bond pad surfaceand the back surface; connecting the bond pad to the component terminalof the microelectronic component with a bond wire that extends throughthe passage; positioning the substrate in a mold cavity with the contactsurface disposed against a lower mold surface of the mold cavity andwith the back surface spaced from an upper mold surface of the moldcavity, leaving a first void between the back side and the upper moldsurface and a second void between the bond pad surface and the bottommold surface; delivering a first portion of a dielectric matrix to thefirst void in the mold cavity; urging the contact surface of thesubstrate against the bottom mold surface with the first portion of thedielectric matrix.
 18. The method of claim 17, further comprisingdelivering a second portion of the dielectric matrix to the second voidin the mold cavity after the first portion of the dielectric matrix isdelivered to the first void.
 19. The method of claim 17, furthercomprising delivering a second portion of the dielectric matrix to thesecond void in the mold cavity simultaneously as the first portion ofthe dielectric matrix is delivered to the first void.
 20. The method ofclaim 17, wherein delivering a first portion of a dielectric matrix tothe first void in the mold cavity further includes flowing the firstportion of the dielectric matrix along a length of the first void in afirst direction, further comprising delivering a second portion of thedielectric matrix to the second void and flowing the second portion ofthe dielectric matrix along a length of the second void in a seconddirection opposite the first direction.